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532 nm脉冲激光辐照CCD实验研究
引用本文:沈洪斌,沈学举,周冰,毛少娟,姜楠,李刚.532 nm脉冲激光辐照CCD实验研究[J].强激光与粒子束,2009,21(10).
作者姓名:沈洪斌  沈学举  周冰  毛少娟  姜楠  李刚
作者单位:军械工程学院 光学与电子工程系, 石家庄 050003
摘    要: 采用532 nm,10 ns的脉冲激光对面阵CCD进行辐照实验,对每一阶段的实验现象和电路层面的破坏机理进行了深入分析,根据实验现象,把脉冲激光对CCD的硬破坏分为3个阶段:第1阶段在低能量密度激光辐照下,被破坏的CCD局部出现无法恢复的白色盲点,但其它部分仍可正常成像;第2阶段CCD探测器受到激光辐照后,在光斑处的时钟线方向出现白色竖直亮线,亮线处无法正常成像且激光辐照撤去后无法恢复;第3阶段受高能量密度激光辐照后,CCD完全失效,无法恢复成像。针对CCD的饱和及恢复阶段,利用Matlab编码对分辨力靶板的成像数据进行处理,分析了激光辐照CCD对饱和像元数和对比度的影响。结果表明:当CCD受到激光辐照时,饱和像元数迅速增多,图像对比度迅速下降为零,激光脉冲消失后,整个CCD成像亮度下降,饱和像元数迅速下降为零,经过一段时间后CCD又恢复至线性工作状态,激光的能量密度越高,CCD恢复所需的时间就越长。研究还发现:当恢复时间超过0.6 s,CCD出现不可恢复的白色条带,严重影响成像质量。

关 键 词:激光辐照  破坏机理  CCD探测器  光电对抗
收稿时间:1900-01-01;

Experimental study of 532 nm pulsed laser irradiating CCD
Shen Hongbin,Shen Xueju,Zhou Bing,Mao Shaojuan,Jiang Nan,Li Gang.Experimental study of 532 nm pulsed laser irradiating CCD[J].High Power Laser and Particle Beams,2009,21(10).
Authors:Shen Hongbin  Shen Xueju  Zhou Bing  Mao Shaojuan  Jiang Nan  Li Gang
Institution:Department of Optics and Electronic Engineering, Ordnance Engineering College, Shijiazhuang 050003, China
Abstract:The array CCD is irradiated by a 532 nm, 10 ns pulsed laser. According to the experiment phenomenon, hard damage process of CCD can be divided into 3 stages. In the first stage, when the CCD is irradiated by the laser with a low energy density, local white blind spots appears, which can not be recovered, while other parts of CCD can work normally. In the second stage, vertical bright white lines appear in the clock line direction of the light spot after irradiation, which can not work normally and can not be recovered by stopping irradiation. In the third stage, the CCD is damaged completely after being irradiated by the laser with a high energy density, and can not be recovered. Damaging mechanism of each stage is analyzed. Finally, aiming at the saturation and recovery stage of the CCD,
Keywords:damaging mechanism  CCD detector  electro-optic warface against
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