介质面刻槽抑制二次电子倍增蒙特卡罗模拟

利用蒙特卡罗方法，针对介质表面刻槽抑制二次电子倍增的实验现象，进行了数值模拟研究。给出了二次电子倍增动力学方程、刻槽边界条件、二次电子初始能量与角度分布以及发射率分布关系；讨论了槽深、槽宽对二次电子倍增的抑制效果，以及同一刻槽结构对不同微波场强度和频率的二次电子倍增抑制能力；分析了双边二次电子倍增区域。数值研究结果表明:增加槽深、缩短槽宽可以抑制二次电子倍增；同一刻槽结构，更易于抑制高频场、场强较低或较高下的二次电子倍增；刻槽尺寸的选择还应避开双边二次电子倍增区间。将数值模拟结果与相关实验现象进行了对比，吻合得较好。

Monte Carlo simulation of multipactor discharge suppressing on grooved dielectric surface

The phenomenon of multipactor discharge suppressing on the grooved dielectric surface adopted in experiment is simulated with the Monte Carlo method. Dynamic equations, grooved surface boundary, initial energy and angular distribution of secondary electrons, and the secondary electron emission ratio are introduced. The suppressing effect of multipactor discharge depending on the depth and width of the groove is discussed. In addition, the suppressing ability of multipactor discharge on a fixed grooved surface depending on electric field and frequency of microwave is studied. Finally, the avoidance of two sided multipactor discharge on the grooved surface is put forward. The numerical results are as follows: increasing groove depth and decreasing groove width could improve suppressing ability of multipactor discharge; it could be easy to suppress high frequency and weak or high electric field of microwave for a fixed grooved surface structure; it is necessary for avoiding the region of two sided multipactor discharge. The numerical results agree with relevant experimental phenomena.