| 半导体开关单次超限工作研究 |
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| 引用本文： | 张帆,何鹏军,茹伟,张远安,毕进.半导体开关单次超限工作研究[J].强激光与粒子束,2014,26(4):045037. |
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| 作者姓名： | 张帆 何鹏军 茹伟 张远安 毕进 |
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| 作者单位： | 1.电子工程研究所, 西安 71 01 00; |
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| 摘 要： | 对半导体开关在这种超限条件下的单次使用情况进行了研究,尤其对级联状态多次试验。试验结果显示,额定电流为30mA的半导体开关可以实现单次放电电流达到10kA的稳定放电。通过对放电过程进行分析发现,开关从导通至最终损坏经过了一个比较复杂的物理过程,电路拓扑结构及其开关安装位置都将会对输出性能产生影响。
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| 关 键 词： | 脉冲驱动 半导体开关 双极性晶体管 电流超限 PN结 |
| 收稿时间： | 2013/10/14 |
High Power Laser and Particle Beams, 2013, 25(5): 1315-1317)Research on single overrunning work of semiconductor switches |
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| Institution: | 1.Electronic Engineering Research Institute,Xi’an 710100,China;2.School of Electrical Engineering,Xi’an Jiaotong University,Xi’an 710049,China |
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| Abstract: | The single use of semiconductor switches in some special conditions was studied, especially in the cascade tests. The results show that the switch whose rated current is 30 mA can achieve a stable single discharge with a current of 10 kA. The discharge process was also analyzed. The switch experiences a complicated physical process from conduction to final damage. The circuit topology and the switch installation position have an effect on the output performance. |
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| Keywords: | pulse drive semiconductor switch bipolar junction transistor overrunning current PN junction |
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