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太赫兹金属双光栅超厚胶光刻工艺
引用本文:单云冲,阮久福,杨军,邓光晟,吕国强.太赫兹金属双光栅超厚胶光刻工艺[J].强激光与粒子束,2014,26(5):053102-211.
作者姓名:单云冲  阮久福  杨军  邓光晟  吕国强
作者单位:1.特种显示技术教育部重点实验室合肥工业大学, 合肥 230009;
基金项目:中央高校基本科研业务费专项资金项目(2012HGQC0007)
摘    要:介绍了制备某太赫兹频率真空辐射光栅的超厚胶光刻工艺,针对工艺中的难点(大厚度和高深宽比)展开了深入分析。实验分析了基片处理、涂胶、前烘、曝光、后烘、显影等工艺过程对光刻的影响,通过优化工艺参数,解决了胶膜脱落、开裂,不同胶层间的结合,光栅沟槽间的光刻胶残留等问题,成功制备了厚度为700μm、深宽比为14的侧壁陡直、表面平整的双光栅结构胶膜。

关 键 词:双光栅    太赫兹    光刻    超厚胶    深宽比
收稿时间:2013/7/2

Terahertz metal bi-grating fabrication using ultra-thick photoresist process
Institution:1.Key Laboratory of Special Display TechnologyHefei University of Technology,Ministry of Education,Hefei 230009,China;2.Academy of Photoelectric Technology,Hefei University of Technology,Hefei 230009,China;3.School of Instrument Science and Opto-electronic Engineering,Hefei University of Technology,Hefei 230009,China
Abstract:As a key part of terahertz vacuum electronic device, metal grating cant be fabricated using traditional methods due to its tiny dimension. The photoetching process of metal bi-grating for radiation source at some terahertz band was presented. The influence of the procedure (including substrate preparation, spin-coating, pre-bake, exposure, post-bake and developing) on photoetching was analyzed experimentally. The problems such as film drop and crack, films combination and the photoresist remaining at gaps which were caused by thick film and high aspect ratio, were solved by the optimizing the process parameters. Finally, a good film microstructure with steep side wall and smooth surface was achieved, with a thickness of 700 m and an aspect ratio of 14. The work presented in this paper provides a technological guide to the similarly related project.
Keywords:bi-grating  terahertz  photoetching  ultra-thick photoresist  aspect ratio
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