| 驱动光束不均匀性研究中的硅平面薄膜 |
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| 引用本文： | 周斌,韩明,陆卫昌,徐平,赖珍荃,沈军,邓忠生,吴广明,张勤远,陈玲燕,王珏.驱动光束不均匀性研究中的硅平面薄膜[J].强激光与粒子束,2000,12(2):181-184. |
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| 作者姓名： | 周斌 韩明 陆卫昌 徐平 赖珍荃 沈军 邓忠生 吴广明 张勤远 陈玲燕 王珏 |
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| 作者单位： | 1. 同济大学波耳固体物理研究所，上海200092; 2. 中科院上海冶金所，上海200050 |
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| 基金项目： | 国家863惯性约束聚变领域资助!( 863 -4 16-3 -6.6)，中物院外基金资助课题!(970 2 13 ) |
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| 摘 要： | 介绍以氧化、扩散、光刻等现代半导体技术结合化学腐蚀工艺实现对Si片的定向自截止腐蚀，制备获得用于研究驱动光束不均匀性的自支撑Si平面薄膜的工艺。通过台阶仪测量厚度在3~4 μm的Si平面薄膜，在扫描范围为1000 μm时，它的表面粗糙度在几十nm；SEM测量表明，Si薄膜表面颗粒度在纳米量级；探讨采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。
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| 关 键 词： | Si平面薄膜 瑞利-泰勒不稳定性 ICF分解实验 驱动光束不均匀 |
| 收稿时间： | 1900-01-01; |
THIN SILICON FOIL USED TO STUDY THE SPATIAL NONUNIFORMITY IN THE DRIVEN INTENSITY |
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| ZHOU Bin,HAN Ming,LU Wei-chang,XU Ping,LAI Zhen-quan,SHEN Jun,DENG Zhong-sheng,WU Guang-ming,ZHANG Qin-yuan,CHEN Ling-yan,WANG Jue.THIN SILICON FOIL USED TO STUDY THE SPATIAL NONUNIFORMITY IN THE DRIVEN INTENSITY[J].High Power Laser and Particle Beams,2000,12(2):181-184. |
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| Authors: | ZHOU Bin HAN Ming LU Wei-chang XU Ping LAI Zhen-quan SHEN Jun DENG Zhong-sheng WU Guang-ming ZHANG Qin-yuan CHEN Ling-yan WANG Jue |
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| Abstract: | The preparation process of thin silicon foil used to study the spatial nonuniformity in the laser driven intensity was introduced. Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil. |
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| Keywords: | thin silicon foil Rayleigh Taylor instability ICF spatial nonuniformity |
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