| RIBLLⅡ与CSRe中束流控制系统的设计 |
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| 引用本文： | 郑楠,梁田,石颖,齐文宗.RIBLLⅡ与CSRe中束流控制系统的设计[J].强激光与粒子束,2008,20(3):0-357. |
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| 作者姓名： | 郑楠 梁田 石颖 齐文宗 |
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| 作者单位： | 1.中国科学院 近代物理研究所, 兰州 730000; |
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| 摘 要： | 介绍了兰州重离子加速器冷却存储环（HIRFL-CSR）的实验环CSRe以及次级束线RIBLLⅡ中束流控制系统的设计。该系统主要采用了Java，COM，Oracle，ARM，DSP，FPGA等技术实现了对磁铁电源的实时、同步控制，已达到对束流的控制。该系统已经运行于现场的束流调试中，并在RIBLLⅡ的束流调试中运行正常、性能稳定。
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| 关 键 词： | 冷却存储环 束流 COM Oracle数据库 DSP |
| 收稿时间： | 2007/4/5 |
Simulation study on thermal effect of Si film irradiated by ultra-short pulse laser |
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| ZHENG Nan,LIANG Tian,SHI Ying,QI Wen-zong.Simulation study on thermal effect of Si film irradiated by ultra-short pulse laser[J].High Power Laser and Particle Beams,2008,20(3):0-357. |
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| Authors: | ZHENG Nan LIANG Tian SHI Ying QI Wen-zong |
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| Institution: | 1.Institute of Modern Physics,Chinese Academy of Sciences,P.O.Box 31,Lanzhou 730000,China;2.Graduate University of Chinese Academy of Sciences,Beijing 100039,China |
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| Abstract: | Using the model of self-consistent for transport dynamics in semiconductors, taking the silicon film as example, the temperature effects on the heat capacity of carrier and lattice, thermal conductivity, relaxation time have been studied with a finite difference method. The primary researches in this paper are on the thermal response of 2 μm Si film irradiated by 500 fs laser pulse. The numerical results indicate that after having been heated for 0.69 ps, the maximum electron temperature at the front surface occurs, after about 4.8 ps the temperature is nearly thermally equilibrated. The temperature of carriers change is rapidly because the heat capacity of carrier changes rapidly. The linear absorption and the rate of change of the carrier energy density due to the changes of the carrier |
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| Keywords: | Silicon film Laser annealing Self-consistent model Finite difference method |
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