高功率905 nm InGaAs隧道结串联叠层半导体激光器

设计出了隧道结串联叠层半导体激光器结构，采用分子束外延进行激光器材料的外延生长，材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺，制作成条宽200 m、腔长800 m 的半导体激光器。两隧道结激光器在脉冲宽度100 ns，重复频率10 kHz，30 A工作电流下输出功率达到80 W，峰值发射波长为905.6 nm，器件的阈值电流为0.8 A，水平和垂直方向的发散角分别为7.8和25。

High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers

We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively.