能量选择表面的瞬态响应

为实现强电磁脉冲防护和信号收发的兼容，研究了一种基于能量选择机制的强电磁防护结构，即能量选择表面。该防护表面利用半导体压控导电特性，实现了强场辐照时防护表面由高阻态向低阻态的转变，具有能量低通特性和超宽带特性。利用场路协同仿真方法，分析了能量选择表面瞬态响应与PIN二极管阻抗特性、强电磁脉冲峰值场强及脉冲前沿的关系，结果显示:尖峰泄漏功率和响应时间与Ⅰ层厚度、强电磁脉冲峰值场强成正比，与少数载流子寿命成反比变化。

Transient response of energy selective surface

To realize the compatibility of both high power electromagnetic pulse(EMP) protection and signal receiving and transmitting, a new electromagnetic protection structure, i.e. energy selective surface(ESS), is proposed based on energy selective mechanism. Employing the voltage dependent conductive characteristic of semiconductor, ESS can promptly turn its state from high impendence to low impendence under high power radiation, and therefore has energy low-pass characteristic and wide band. In the design and simulation, PIN diode array was employed, and filed-circuit co-simulation was carried out. The relationship of ESS, PIN diode impedance and incident EMP intensity and rise time has been described, and the results are summarized as follows: the peak leakage power and response time are proportional to thickness of layer Ⅰ and the amplitude of incident EMP electric intensity, and inversely proportional to minority carrier life time.