基于缺陷接地结构的太赫兹双频微带天线

提出了一种工作在太赫兹频段的双频微带天线。在普通矩形微带天线的基础上，在辐射贴片上加载45°和135°的矩形贴片增大辐射面积，增大高频谐振点处阻抗带宽。通过引入缺陷接地结构使得天线在接地板处的电流路径改变，并与辐射贴片相互耦合，从而实现双频特性。为提高天线增益，在辐射贴片边缘加载若干寄生矩形贴片，并增加了寄生贴片处的基板厚度。该款天线可以同时在520 GHz(508~532 GHz)和680 GHz(581~766 GHz)的频段下工作，其中高频段的相对带宽达到了27.5%，最大增益达到了3.54 dB和4.11 dB。该双频天线结构相对简单，各项性能指标稳定，对于工作在太赫兹频段上的通信系统和无线传输系统具有一定的应用价值。

Terahertz dual-band microstrip antenna based on defected ground structure

A dual-band microstrip antenna operating in the terahertz band is proposed. Two rectangular patches are loaded at 45° and 135° on the antenna's radiating patch to increase the radiation area and the impedance bandwidth at the high frequency resonance point. By introducing a defected ground structure(DGS), the current path of the antenna at the ground plate is changed and coupled with the radiation patch so as to realize dual frequency characteristics. In order to increase the gain of the antenna, several parasitic rectangular patches are loaded on the edge of the radiating patch. To further improve the antenna gain, the thickness of the substrate at the parasitic patch is increased, so that the antenna can simultaneously operate well at two bands, namely 520 GHz (508-532 GHz) and 680 GHz (581-766 GHz). The corresponding maximum gains are 3.54 dB and 4.11 dB respectively. One of the relative bandwidth at high frequency reached 27.5%. The dual-band antenna has the characteristics of simple structure and stable performance, and it has the application value for terahertz communications and wireless transmission systems.