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脉冲激光辐照单晶硅形成的低维结构及其光致荧光特性
引用本文:许丽,黄伟其,吴克跃,金峰,王海旭.脉冲激光辐照单晶硅形成的低维结构及其光致荧光特性[J].强激光与粒子束,2008,20(1):58-61.
作者姓名:许丽  黄伟其  吴克跃  金峰  王海旭
作者单位:1. 贵州大学 贵州省光电子技术与应用重点实验室, 贵阳 550025;2. 贵州教育学院 物理系, 贵阳 550003
摘    要: 将功率密度约为0.5 J·s-1·cm-2、脉冲宽度约为8 ns、束斑直径为0.045 mm、波长为1 064 nm的YAG激光束照射在硅样品表面打出小孔,在孔内的侧壁上形成较规则的网孔状结构;该结构有很强的光致荧光,其强度比该样品的瑞利散射强;发光峰中心约在700 nm处。在无氧化的环境里用激光加工出的硅样品几乎无发光,这证实了氧在光致荧光增强上起着重要作用。用冷等离子体波模型来解释孔侧壁网孔状结构形成的机理,并用量子受限-发光中心模型来解释纳米网孔壁结构的强荧光效应。当激光辐照时间为9 s时,孔洞侧壁上的网孔状结构较稳定,且有较强的光致荧光。

关 键 词:激光辐照  纳米网孔壁  光致荧光增强  氧化
文章编号:1001-4322(2008)01-0058-04
收稿时间:2007-04-23
修稿时间:2007-11-22

Hole-net structure and photoluminescence emission monocrystalline on silicon irradiated by laser
XU Li,HUANG Wei-qi,WU Ke-yue,JIN Feng,WANG Hai-xu.Hole-net structure and photoluminescence emission monocrystalline on silicon irradiated by laser[J].High Power Laser and Particle Beams,2008,20(1):58-61.
Authors:XU Li  HUANG Wei-qi  WU Ke-yue  JIN Feng  WANG Hai-xu
Institution:1. Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China;2. Department of Physics, Guizhou Educational College, Guiyang 550003, China
Abstract:A kind of hole-net structure can be formed on silicon sample irradiated by pulse laser with power of 0.5 J·s-1· cm-2 and wavelength of 1 064 nm. The photoluminescence(PL) emission is enhanced by the hole-net structure. The PL peak center is about 700 nm. The oxidation-free silicon sample almost does not emit,which proves that oxidation of silicon may be most important in enhancing PL emission. The quantum confinement-luminescence center model is used to explain the increasing PL emission in the hole-net structure. The plasma wave model is used to explain the forming mechanism of hole-net structure. Under the optimum conditions in preparing process,the sample with enhanced PL emission and more stable low-dimensional structures can be obtained by 9 s irradiation.
Keywords:Laser irradiation  Hole-net structure  Photoluminescence enhancement  Oxidation
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