HEPS在轴注入冲击器系统及快脉冲电源样机研制 |
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引用本文: | 陈锦晖,王磊,施华,霍丽华,王冠文,刘鹏,史晓蕾.HEPS在轴注入冲击器系统及快脉冲电源样机研制[J].强激光与粒子束,2019,31(4):040017-1-040017-6. |
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作者姓名: | 陈锦晖 王磊 施华 霍丽华 王冠文 刘鹏 史晓蕾 |
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作者单位: | 1.中国科学院大学 核科学与技术学院, 北京 100049 |
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基金项目: | 国家自然科学基金项目11675194国家自然科学基金项目11475200科技部国家重点研发计划项目2016YFA0402002 |
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摘 要: | 高能同步辐射光源(HEPS)是我国计划建造的下一代基于储存环的高亮度光源,束流自然发射度已经接近衍射极限。作为典型的低发射度储存环(LER),HEPS的动力学孔径远小于物理孔径,传统的离轴累积注入已经无法满足要求,只能采用基于strip-line kicker的在轴注入方案。为了实现逐束团操控,HEPS要求注入kicker脉冲电源底宽(3%~3%) < 10 ns,半高宽(50%~50%)>4.5 ns,幅度>±17.5 kV(50 Ω负载),重复频率>50 Hz。高能同步辐射光源验证装置(HEPS-TF)工程研制了一台基于DSRD的双极性快脉冲电源性能样机,在50 Ω负载上可以获得上升时间(10%~90%) < 2.6 ns,下降时间(90%~10%) < 3.2 ns,半高宽(50%~50%)>5 ns,底宽(3%~3%) < 10 ns,幅度>±18 kV的脉冲高压,可以满足HEPS注入基准方案——在轴置换注入的要求。
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关 键 词: | HEPS 衍射极限光源 注入引出 在轴注入 带状线冲击器 快脉冲电源 DSRD |
收稿时间: | 2019-01-09 |
Application of fast pulsed power supply to high energy photon source |
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Institution: | 1.School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China2.Accelerator Division, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | High Energy Photon Source (HEPS) is the next generation of high-brightness photon source based on storage ring planned in China. Its natural emittance of the beam is close to the diffraction limit. As a typical low emittance storage ring (LER), the dynamic aperture of HEPS is far smaller than the physical aperture. Hence the traditional off-axis cumulative injection can not meet the requirements, and only strip-line kicker based on in-line injection scheme can be used. In order to realize bunch-by-bunch control, HEPS requires injecting kicker electrical pulse with a bottom width (3%-3%) of less than 10 ns, a half width (50%-50%) of more than 4.5 ns, an amplitude of >+17.5 kV (50 Ω load) and a repetition frequency of more than 50 Hz. A prototype of bipolar fast pulsed power supply based on DSRD has been developed on the project of HEPS-TF. The performance of the prototype can produce a pulse at 50 Ω load with rise time (10%-90%) < 2.6 ns, fall time (90%-10%) < 3.2 ns, FWHM (50%-50%) > 5 ns, bottom width (3%-3%) < 10 ns, amplitude >18 kV. It can meet the requirement of on-axis swap-out injection which is the baseline injection scheme of HEPS. |
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