| 退火温度对KDP晶体光学均匀性的影响研究 |
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| 引用本文： | 王圣来,王波,张光辉,牛爱芹,尹鑫,高樟寿,房昌水,孙洵,李义平.退火温度对KDP晶体光学均匀性的影响研究[J].强激光与粒子束,2004,16(4):437-440. |
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| 作者姓名： | 王圣来 王波 张光辉 牛爱芹 尹鑫 高樟寿 房昌水 孙洵 李义平 |
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| 作者单位： | 1．山东大学 晶体材料国家重点实验室，山东 济南 250100； 2．山东轻工业学院，山东 济南 250100 |
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| 基金项目： | 国家863计划项目资助课题(59823003);山东大学青年科学基金资助课题 |
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| 摘 要： | 研究了磷酸二氢钾（KDP）晶体热退火前后光学均匀性的变化，发现适当温度下退火可以降低KDP晶体的内应力，提高晶体的消光比，从而提高晶体的光学均匀性。实验证明，50℃下退火即可消除部分内应力，110℃下退火可以消除生长鬼影和鬼线。但是,退火温度太高（如170℃）,也可能使晶体的均匀性降低。
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| 关 键 词： | 热退火 KDP晶体 消光比 干涉 |
| 文章编号： | 1001-4322(2004)04-0437-04 |
| 收稿时间： | 2003/10/9 |
| 修稿时间： | 2003年10月9日 |
Study on improvement of the homogeneity of KDP crystals by annealing |
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| WANG Sheng-lai,WANG Bo,ZHANG Guang-hui,NIU Ai-qin,YIN Xin,GAO Zhang-shou,FANG Chang-shui,SUN Xun,LI Yi-ping ,China, . Shandong Institute of Light Industry,Jinan ,China.Study on improvement of the homogeneity of KDP crystals by annealing[J].High Power Laser and Particle Beams,2004,16(4):437-440. |
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| Authors: | WANG Sheng-lai WANG Bo ZHANG Guang-hui NIU Ai-qin YIN Xin GAO Zhang-shou FANG Chang-shui SUN Xun LI Yi-ping China Shandong Institute of Light Industry Jinan China |
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| Institution: | 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;2. Shandong Institute of Light Industry, Jinan 250100, China |
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| Abstract: | Potassium dihydrogen phosphate (KDP) crystals were baked at varied temperatures in the same procedure.Three kinds of interference techniques were used to investigate stress-induced birefringence in KDP crystals.It was found that the annealing temperature greatly affects the improvement of the homogeneity of KDP crystal.Obvious improvement of homogeneity of KDP crystal was found after annealing at 50℃.With the rise of the annealing temperature,the extinction ratio increased.Growth ghost disappeared after annealing at 110℃.The extinction ratio decreased when the crystals were annealed at very high temperature,such as 170℃. |
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| Keywords: | Thermal annealing KDP crystal Extinction ratio Interference |
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