阵列碳纳米管的石墨化程度

采用化学气相沉积法制备了阵列碳纳米管薄膜,对阵列碳纳米管的石墨化程度进行了系统研究。利用扫描电子显微镜(SEM)、拉曼光谱(Raman)对样品形貌以及结构进行了表征。探讨了不同实验参数对阵列碳纳米管石墨化程度影响的机理。结果发现,在一定催化剂浓度范围内,催化剂浓度过低时,阵列碳纳米管的石墨化程度较差,而随着催化剂浓度的增加,阵列碳纳米管的石墨化程度逐渐变好;生长石墨化程度较好的阵列碳纳米管需要合适的进液速度,进液速度过低或过高都会使得碳纳米管的石墨化程度变差;此外,生长石墨化程度较好的阵列碳纳米管也需要合适的生长温度,生长温度过低或过高都会使得碳纳米管的石墨化程度变差。

Graphitization degree of carbon nanotube arrays

Aligned carbon nanotube arrays (ACNTs) were prepared by chemical vapor deposition (CVD). The graphitization degree of ACNTs was systematically investigated. The morphology and structure of the products were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The mechanism how the different experiment conditions affect the graphitization degree of ACNTs was discussed. The results indicated that the graphitization degree of ACNTs would be bad when the concentration of catalyst was too low within a certain range of catalyst concentration. And only if the flowing rate of reactant is appropriate, the graphitization degree of ACNTs will be nice. Moreover, in order to obtain a good graphitization degree of ACNTs, the growth temperature is need to control accurately.