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氮气退火对二氧化钛薄膜光学性能的影响
引用本文:居勇峰,祖小涛,向霞.氮气退火对二氧化钛薄膜光学性能的影响[J].强激光与粒子束,2008,20(1):143-146.
作者姓名:居勇峰  祖小涛  向霞
作者单位:电子科技大学 应用物理系, 成都 610054
基金项目:教育部高等学校博士学科点专项科研基金
摘    要: 提出了一种利用离子注入和后续退火制备氮掺杂TiO2薄膜的方法。首先在室温下向石英玻璃中注入Ti离子,随后在氮气中退火到900 ℃,从而制备了氮掺杂的玻璃基TiO2薄膜。SRIM2006程序模拟和卢瑟福背散射谱(RBS)研究表明注入离子从样品表面开始呈高斯分布,实验结果和模拟结果吻合很好。X射线光电子能谱(XPS)研究结果表明注入态样品中形成了金属Ti和TiO2,900 ℃退火后金属Ti转变成TiO2,同时N原子替代少量的晶格O原子形成了O-Ti-N化合物。紫外-可见吸收光谱(UV-Vis)结果显示,当退火温度至500 ℃时,在吸收光谱中开始出现TiO2的吸收边,随退火温度升高到900 ℃,由于O-Ti-N化合物形成,TiO2的吸收边从3.98 eV红移到3.30 eV,TiO2吸收边末端延伸到可见光区,在可见光区的吸收强度明显增加。

关 键 词:离子注入  氮掺杂TiO2薄膜  光学带隙  退火
文章编号:1001-4322(2008)01-0143-04
收稿时间:2007-10-17
修稿时间:2007-12-26

Optical properties of TiO2 film after annealing in nitrogen
JU Yong-feng,ZU Xiao-tao,XIANG Xia.Optical properties of TiO2 film after annealing in nitrogen[J].High Power Laser and Particle Beams,2008,20(1):143-146.
Authors:JU Yong-feng  ZU Xiao-tao  XIANG Xia
Institution:Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract:In order to prepare nitrogen-doped TiO2 film in the surface of SiO2 glass,Ti ion implantation was performed at room temperature in fused silica and then the as-implanted samples were annealed in nitrogen ambient up to 900℃. SRIM code and Rutherford backscattering spectrometry (RBS) showed a Gauss distribution of Ti ions in the surface of as-implanted samples. The experimental profile of Ti ions is consistent with the simulated one. X-ray photoelectron spectroscopy (XPS) indicated that metallic Ti and TiO2 coexisted in the as-implanted samples. After annealing at 900℃,metallic Ti was oxidized into TiO2,and a new compound of O-Ti-N formed because a small amount of oxygen atoms were substituted by nitrogen atoms in the lattice of TiO2. UV-Vis spectra indicated that the optical absorption edge of TiO2 appeared after annealing at 500℃.After annealing at 900℃,red shift of the optical absorption edge of TiO2 was observed from 3.98 eV (500℃) to 3.30 eV due to the formation of OTi-N compound. The tail of the absorption edge extended to the visible waveband and the absorbance of TiO2 increased in the visible waveband.
Keywords:Ion implantation  Nitrogen-doped TiO2 film  Energy gap  Annealing
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