嵌入式ADC电磁敏感度的温度效应分析与实验

模数转换器(ADC)在测控系统中应用广泛，针对嵌入式ADC复杂环境下的电磁敏感性问题，通过理论分析和实验测量研究了环境温度对其电磁敏感度的影响。结合ADC结构与特性，分析了射频信号对ADC的干扰机制，指出了环境温度对干扰信号作用下的金属氧化物半导体(MOS)漏电流的影响。在不同温度下，测量、分析了电磁干扰下各部分电路参数的变化情况。并在10 MHz~1 GHz频率范围、-10~80 ℃温度范围内测量了ADC电磁敏感度的温度效应。结果表明，变化的环境温度会通过影响MOS晶体管的迁移率，改变其在电磁干扰下的响应，造成ADC电磁敏感度随环境温度变化发生显著漂移。

Analysis and measurement of temperature effect on electromagnetic susceptibility of embedded ADC

Analog to Digital Converter (ADC) is widely used in measurement and control systems, the electromagnetic susceptibility problem of embedded ADC has been gradually highlighted in complex environment. The ambient temperature effect on electromagnetic susceptibility is analyzed by theoretical analysis and experimental measurement. Combined with the structure and characteristic of ADC, the mechanism of radio frequency interference signal disturbing ADC is analyzed. The influence of temperature effect on drain current of metal-oxide-semiconductor(MOS) transistors under interference signal is pointed out. At different temperatures, the circuit parameters of each part are measured and analyzed under electromagnetic interference. The temperature effect on ADC electromagnetic susceptibility is measured within the frequency range from 10 MHz to 1 GHz and the temperature range from -10 ℃ to 80 ℃. Results show that the changing ambient temperature changes the response of ADC under electromagnetic interference by altering the mobility of MOS transistors, causing significant drift of electromagnetic susceptibility.