1维亚微米弹道二极管在不同外加电压脉冲下的数值模拟

 以适合亚微米器件的流体动力学模型为基础，建立了1维数值模拟程序，程序中采用耦合牛顿法求解非线性方程组。应用该程序对亚微米1维弹道二极管进行了瞬态数值模拟，分析了外加低电压和高电压脉冲情况下的电场强度、载流子浓度、载流子温度等参数的变化情况。低电压脉冲下的结果与文献一致；对于文献中并未开展的高电压脉冲下的模拟，得到了器件处于非正常工作状态的各参数分布曲线，并尝试用二次击穿理论对结果进行分析。结果显示:随着外电压的升高，载流子的碰撞电离将导致少子空穴浓度急剧增大，并达到与电子浓度相同的量级，这时在器件分析中空穴方程已不能省略，并且载流子浓度将取代掺杂浓度控制电势分布，并进而影响电场及电流密度，涌极附近电场将增强，电流密度也将迅速增加。结论可为研究瞬态电磁脉冲对2维器件的损伤效应提供参考。

Transient numerical simulations of one dimensional ballistic diode under different voltages

In order to find out the invalidation of submicrometer semiconductor devices under different microwave pulses,the author developed a simulation program based on the hydrodynamic method(HDM).Coupled Newton method was used in the program to solve nonlinear equations that describe device properties.The paper has shown the transient simulation results on a one dimensional ballistic diode done by the program,including the electron temperature,electric field,electron and hole densities,etc.When a relatively high voltage(10 V) is applied to the device,the results show great difference from low ones.The author has tried the second breakdown theory on the phenomenon.Further work should be done to get more accurate simulation results and reasonable physical analysis.