缓冲层对LBO晶体上1 064 nm，532 nm增透膜附着力的影响

 采用电子束蒸发方法在LBO晶体上制备了无缓冲层和具有不同缓冲层的1 064 nm，532 nm二倍频增透膜。利用分光光度计、纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力以及抗激光损伤性能进行了测试分析。结果表明：所有样品在1 064 nm和532 nm波长的剩余反射率都分别小于0.1％和0.2％；与无缓冲层样品相比，预镀Al₂O₃缓冲层样品的附着力提高了43.1％，具有SiO₂缓冲层样品的附着力显著提高，而MgF₂缓冲层的插入却导致薄膜附着力降低。应用全塑性压痕理论和剪切理论对薄膜的附着力增强机制进行了分析。薄膜的抗激光损伤性能分析表明，SiO₂缓冲层也有助于改进薄膜的激光损伤阈值。

Influence of buffer layer on adhesion of 1 064 nm, 532 nm frequency-doubled antireflection coating to LBO crystal

1 064 nm, 532 nm frequency-doubled antireflection coatings with no buffer layer or with different buffer layers were fabricated on LBO crystal using electron beam evaporation technique. The optical property, adhesion and laser-induced damage threshold(LIDT) were investigated. The results showed that the reflectance of all samples was below 0.1% and 0.2% at wavelength of 1 064 nm and 532 nm, respectively. Compared with the sample with no buffer layer, the critical adhesion of the sample with Al2O3 buffer layer of was increased by 43.1% and that of the coating with SiO2 buffer layer of was improved significantly, and the critical adhesion of the coating with MgF2 buffer layer of was decreased. The mechanism of adhesion strengthening of the coating was analyzed by full plastic indentation and