| 埋点靶中CH薄膜的制备工艺研究 |
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| 引用本文： | 张占文,吴卫东,许华,余斌,黄勇,魏胜.埋点靶中CH薄膜的制备工艺研究[J].强激光与粒子束,2001,13(1):68-71. |
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| 作者姓名： | 张占文 吴卫东 许华 余斌 黄勇 魏胜 |
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| 作者单位： | 中国工程物理研究院 高温高密度等离子体物理国家重点实验室，四川 绵阳 621900 |
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| 基金项目： | 国防科技基础科研基金资助课题 |
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| 摘 要： | CH薄膜的制备是埋点靶制备的关键技术之一，本文主要研究了钨丝辅助裂解制备CH薄膜的制备工艺。研究表明蒸发舟温度和衬底温度对沉积速率影响较大，而衬底距离对沉积速率影响较小；红外光谱和质谱分析表明薄膜的主要成分是聚对二甲苯。
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| 关 键 词： | CH薄膜 沉积速率 埋点靶 |
| 文章编号： | 1001－4322（2001）01－0068－04 |
| 收稿时间： | 2000/8/18 |
| 修稿时间： | 2000年8月18日 |
Study on the fabrication technology of the CH film in microspot targets |
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| ZHANG Zhan-wen,WU Wei-dong,XU Hua,HUANG Yong,YU Bin,LUO Jiang-shan.Study on the fabrication technology of the CH film in microspot targets[J].High Power Laser and Particle Beams,2001,13(1):68-71. |
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| Authors: | ZHANG Zhan-wen WU Wei-dong XU Hua HUANG Yong YU Bin LUO Jiang-shan |
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| Institution: | Research Center of Laser Fusion, CAEP, P.O.Box 919-987, Mianyang, 621900,China |
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| Abstract: | The paper focuses on the production of the CH film by way of hotwire chemical vapor deposition. The effect of substrate temperature, evaporator temperature and substrate distance on the deposition rate of the CH film is discussed. The CH film with thickness range of 4～30μm is produced with the substrate temperature being 235～265K and the evaporator temperature being 370～410K. It is observed that under the condition of low substrate temperature and appropriate evaporator temperature, the deposition rate would be higher, while substrate distance had little effect on it. The IR spectrum and mass spectrum show that the CH film mainly consists of polystyrene． |
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| Keywords: | CH film deposition rate microspot targets |
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