首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Pressure effects on the semiconductor-semimetal transition in Ti2O3
Authors:B Viswanathan  S Usha Devi  C N R Rao
Institution:(1) Department of Chemistry, Indian Institute of Technology, 208016 Kanpur;(2) Materials Science Division, National Aeronautical Laboratory, 560017 Bangalore
Abstract:Hydrostatic pressure has negligible effect on the resistivity anomaly and thec H /a H ratio of Ti2O3. The results are consistent with the band-crossing mechanism wherein the a T and e T bands cross as thec H /a H ratio increases.
Keywords:Semiconductor-metal transition  pressure effects on Ti2O3
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号