Raman scattering of polycrystalline GaSb thin films grownby co-evapouration process |
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Authors: | Qiao Zai-Xiang Sun Yun He Wei-Yu Liu Wei He Qing and Li Chang-Jian |
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Institution: | The Tianjin Key Laboratory for Photoelectronics Thin Film
Devices and Technology, Nankai University, Tianjin 300071,
China |
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Abstract: | This paper reports that GaSb thin films have been co-deposited on
soda-lime glass substrates. The GaSb thin film structural
properties are characterized by Raman spectroscopy. The Sb--A1g/GaSb--TO ratio decreases rapidly with the increase of substrate
temperature, which suggests a small amount of crystalline Sb in the GaSb
thin film and suggests that Sb atoms in the thin film decrease. In
Raman spectra, the transverse optical (TO) mode intensity is
stronger than that of the longitudinal optical (LO) mode, which
indicates that all the samples are disordered. The LO/TO intensity ratio
increases with increasing substrate temperature which suggests the
improved polycrystalline quality of the GaSb thin film. A downshift of
the TO and LO frequencies of the polycrystalline GaSb thin film to
single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is
around 1.0~GPa. The uniaxial stress decreases with increasing
substrate temperature. These results suggest that a higher
substrate temperature is beneficial in relaxing the stress in GaSb thin
film. |
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Keywords: | GaSb co-evaporation Raman stress |
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