首页 | 本学科首页   官方微博 | 高级检索  
     检索      

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells
作者姓名:汪莱  王嘉星  赵维  邹翔  罗毅
作者单位:Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
基金项目:Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020, 60723002, 50706022 and 60977022), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Techgnology Research and Development Program of China (Grant Nos. 2007AA05Z429 and 2008AA03A194), the Beijing Natural Science Foundation, China (Grant No. 4091001), and the Industry, Academia and Research combining and Public Science and Technology Special Program of Shenzhen, China (Grant No. 08CXY-14).
摘    要:Blue In0.2 Ga0.8N multiple quantum wells (MQWs) with Inx Ga1xN (x=0.01 0.04) barriers are grown by metal organic vapour phase epitaxy.The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra.Furthermore,a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs).It is found that by adopting the InGaN barrier beneath the lowest well,it is possible to reduce the strain hence the NRCs in InGaN MQWs.By optimizing the thickness and the indium content of the InGaN barriers,the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs.On the other hand,the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously.In addition,the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.

关 键 词:metal  organic  vapour  phase  epitaxy  quantum  wells  nitrides  light  emitting  diodes

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells
Wang Lai,Wang Jia-Xing,Zhao Wei,Zou Xiang and Luo Yi.Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells[J].Chinese Physics B,2010,19(7):76803-076803.
Authors:Wang Lai  Wang Jia-Xing  Zhao Wei  Zou Xiang and Luo Yi
Institution:Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract:Blue In0.2Ga0.8N multiple quantum wells (MQWs) with InxGa1 - xN (x=0.01-0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.
Keywords:metal organic vapour phase epitaxy  quantum wells  nitrides  light emitting diodes
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《中国物理 B》浏览原始摘要信息
点击此处可从《中国物理 B》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号