| Far-field superlens for nanolithography |
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| 作者姓名： | 陈健 王庆康 李海华 |
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| 作者单位： | National Key Laboratory of Micro/Nano Fabrication Technology, Key
Laboratory for Thin Film and Microfabrication Technology of Ministry
of Education, Research Institute of Micro/Nano Science and
Technology,
Shanghai Jiao Tong University, Shanghai 200240,;National Key Laboratory of Micro/Nano Fabrication Technology, Key
Laboratory for Thin Film and Microfabrication Technology of Ministry
of Education, Research Institute of Micro/Nano Science and
Technology,
Shanghai Jiao Tong University, Shanghai 200240,;National Key Laboratory of Micro/Nano Fabrication Technology, Key
Laboratory for Thin Film and Microfabrication Technology of Ministry
of Education, Research Institute of Micro/Nano Science and
Technology,
Shanghai Jiao Tong University, Shanghai 200240, |
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| 基金项目： | Project supported by the Shanghai
Committee of Science and Technology of China (Grant No.~0852nm06600)
and the National Natural Science Foundation of China(Grant
No.~60808014). |
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| 摘 要： | A far-field optical lithography is developed in this paper.By designing the structure of a far-field optical superlens,lithographical resolution can be improved by using a conventional UV light source.The finite different time domain numerical studies indicate that the lithographic resolution at 50 nm line width is achievable with the structure shown in this paper by using 365 nm wavelength light,and the light can be transferred to a far distance in the photoresist.
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| 关 键 词： | far-field lithography superlens resolution |
| 收稿时间： | 2009-06-22 |
Far-field superlens for nanolithography |
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| Chen Jian,WangQing-Kang and Li Hai-Hua.Far-field superlens for nanolithography[J].Chinese Physics B,2010,19(3):34202-034202. |
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| Authors: | Chen Jian WangQing-Kang and Li Hai-Hua |
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| Institution: | National Key Laboratory of Micro/Nano Fabrication Technology, Key
Laboratory for Thin Film and Microfabrication Technology of Ministry
of Education, Research Institute of Micro/Nano Science and
Technology,
Shanghai Jiao Tong University, Shanghai 200240, |
| |
| Abstract: | A far-field optical lithography is developed in this
paper. By designing the structure of a far-field optical superlens,
lithographical resolution can be improved by using a
conventional UV light source. The finite different time domain
numerical studies indicate that the lithographic resolution at 50~nm
line width is achievable with the structure shown in this paper by
using 365~nm wavelength light, and the light can be transferred to a
far distance in the photoresist. |
| |
| Keywords: | far-field lithography superlens resolution |
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