| Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy |
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| 作者姓名： | 王一 郭祥 魏节敏 杨晨 罗子江 王继红 丁召 |
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| 作者单位： | College of Big Data and Information Engineering;Power Semiconductor Device Reliability Research Center of the Ministry of Education;Key Laboratory of Micro-Nano-Electronics of Guizhou Province;School of Information |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant Nos.61564002 and 11664005);the Science and Technology Foundation of Guizhou Province,China(Grant No.QKH-[2017]1055);Guizhou University Talent Foundation(Grant No.GDJHZ-[2015]23)。 |
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| 摘 要： | GaAs multiple concentric nano-ring structures(CNRs)are prepared with multistep crystallization procedures by droplets epitaxy on GaAs(001)to explore the influence of different initial crystallization temperatures on CNRs morphology.Atomic force microscope(AFM)images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy.Meanwhile,with the increase of initial crystallization temperature,the inner ring height and density of CNRs are increased,and outer rings are harder to form.In addition,the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory.The method can be used to calculate the diffusion activation energy of gallium atoms(0.7±0.1 eV)on the GaAs(001)surface conveniently.
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| 关 键 词： | CONCENTRIC nano-ring structures CRYSTALLIZATION temperature activation energy of DIFFUSION |
Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy |
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| Yi Wang,Xiang Guo,Jiemin Wei,Chen Yang,Zijiang Luo,Jihong Wang,Zhao Ding.Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy[J].Chinese Physics B,2020(4):391-396. |
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| Authors: | Yi Wang Xiang Guo Jiemin Wei Chen Yang Zijiang Luo Jihong Wang Zhao Ding |
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| Institution: | (College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Power Semiconductor Device Reliability Research Center of the Ministry of Education,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics of Guizhou Province,Guiyang 550025,China;School of Information,Guizhou University of Finance and Economics,Guiyang 550025,China) |
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