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Numerical analysis of In0.53 Ga0.47 As/InP single photon avalanche diodes
作者姓名:周鹏  李淳飞  廖常俊  魏正军  袁书琼
作者单位:Department of Physics,Harbin Institute of Technology Laboratory of Photonic Information Technology,School for Information and Optoelectronic Science and Engineering,South China Normal University
基金项目:Project supported by the National Basic Research Program of China (Grant Nos. G2001039302 and 007CB307001), and the Guangdong Provincial Key Technology Research and Development Program, China (Grant No. 2007B010400009).
摘    要:A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.

关 键 词:single  photon  avalanche  diodes  gate-mode  single  photon  quantum  efficiency  dark  count  probability
收稿时间:2010-06-30

Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes
Zhou Peng,Li Chun-Fei,Liao Chang-Jun,Wei Zheng-Jun and Yuan Shu-Qiong.Numerical analysis of In0.53 Ga0.47 As/InP single photon avalanche diodes[J].Chinese Physics B,2011,20(2):28502-028502.
Authors:Zhou Peng  Li Chun-Fei  Liao Chang-Jun  Wei Zheng-Jun and Yuan Shu-Qiong
Institution:Department of Physics, Harbin Institute of Technology, Harbin 150001, China;Department of Physics, Harbin Institute of Technology, Harbin 150001, China;Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China;Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China;Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
Abstract:A rigorous theoretical model for In0.53Ga0.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation--recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μ m, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.
Keywords:single photon avalanche diodes  gate-mode  single photon quantum efficiency  dark count probability
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