Simulation of the light extraction efficiency of nanostructure light-emitting diodes |
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Authors: | Zhu Ji-Hong Wang Liang-Ji Zhang Shu-Ming Wang Hui Zhao De-Gang Zhu Jian-Jun Liu Zong-Shun Jiang De-Sheng and Yang Hui |
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Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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Abstract: | The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure. |
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Keywords: | light extraction efficiency InGaN/GaN multiple quantum well nanostructure |
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