| Quantum diffusion in bilateral doped chains |
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| 作者姓名： | 金福报 张凯旺 钟建新 |
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| 作者单位： | Department of Physics,Xiangtan University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 10974166 and 10774127）, the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China （Grant No. 708068）, and the Research Foundation of Education Bureau of Hunan Province of China （Grant No. 09A094）. |
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| 摘 要： | In this paper,we quantitatively study the quantum diffusion in a bilateral doped chain,which is randomly doped on both sides.A tight binding approximation and quantum dynamics are used to calculate the three electronic characteristics:autocorrelation function C(t),the mean square displacement d(t) and the participation number P (E) in different doping situations.The results show that the quantum diffusion is more sensitive to the small ratio of doping than to the big one,there exists a critical doping ratio q 0,and C(t),d(t) and P (E) have different variation trends on different sides of q 0.For the self-doped chain,the doped atoms have tremendous influence on the central states of P (E),which causes the electronic states distributed in other energy bands to aggregate to the central band (E=0) and form quasi-mobility edges there.All of the doped systems experience an incomplete transition of metal-semiconductor-metal.
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| 关 键 词： | quantum diffusion doped chain metal semiconductor transition |
| 收稿时间： | 2010-12-12 |
Quantum diffusion in bilateral doped chains |
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| Jin Fu-Bao,Zhang Kai-Wang and Zhong Jian-Xin.Quantum diffusion in bilateral doped chains[J].Chinese Physics B,2011,20(7):76701-076701. |
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| Authors: | Jin Fu-Bao Zhang Kai-Wang and Zhong Jian-Xin |
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| Institution: | Department of Physics, Xiangtan University, Xiangtan 411105, China;Department of Physics, Xiangtan University, Xiangtan 411105, China;Department of Physics, Xiangtan University, Xiangtan 411105, China |
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| Abstract: | In this paper, we quantitatively study the quantum diffusion in a bilateral doped chain, which is randomly doped on both sides. A tight binding approximation and quantum dynamics are used to calculate the three electronic characteristics: autocorrelation function C(t), the mean square displacement d(t) and the participation number P(E) in different doping situations. The results show that the quantum diffusion is more sensitive to the small ratio of doping than to the big one, there exists a critical doping ratio q0, and C(t), d(t) and P(E) have different variation trends on different sides of q0. For the self-doped chain, the doped atoms have tremendous influence on the central states of P(E), which causes the electronic states distributed in other energy bands to aggregate to the central band (E=0) and form quasi-mobility edges there. All of the doped systems experience an incomplete transition of metal-semiconductor-metal. |
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| Keywords: | quantum diffusion doped chain metal semiconductor transition |
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