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Design and analysis of doped left-handed materials
Authors:Zhang Hong-Xin  Bao Yong-Fang  Lü Ying-Hua  Chen Tian-Ming  Wang Hai-Xia
Institution:Institute of Communication and Network Technology, Beijing University of Posts and Telecommunications, Beijing 100876, China; School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China; University of Electronic~Science and Technology of China, Chengdu 610054, China
Abstract:We devise three sorts of doped left-handed materials (DLHMs) by introducing inductors and capacitors into the traditional left-handed material (LHM) as heterogeneous elements. Some new properties are presented through finite-difference time-domain (FDTD) simulations. On the one hand, the resonance in the traditional LHM is weakened and the original pass band is narrowed by introducing inductors. On the other hand, the original pass band of the LHM can be shifted and a new pass band can be generated by introducing capacitors. When capacitors and inductors are introduced simultaneously, the resonance of traditional LHM is somewhat weakened and the number of original pass bands as well as its bandwidth can be changed.
Keywords:LHMs  doped materials  forbidden band  pass band
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