Design and analysis of doped left-handed materials |
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Authors: | Zhang Hong-Xin Bao Yong-Fang Lü Ying-Hua Chen Tian-Ming Wang Hai-Xia |
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Institution: | Institute of Communication and Network Technology,
Beijing University of Posts and Telecommunications,
Beijing 100876, China; School of Electronic Engineering, Beijing
University of Posts and Telecommunications, Beijing 100876, China; University of Electronic~Science and Technology of China,
Chengdu 610054, China |
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Abstract: | We devise three sorts of doped left-handed materials (DLHMs) by
introducing inductors and capacitors into the traditional
left-handed material (LHM) as heterogeneous elements. Some new
properties are presented through finite-difference time-domain
(FDTD) simulations. On the one hand, the resonance in the
traditional LHM is weakened and the original pass band is narrowed
by introducing inductors. On the other hand, the original pass band
of the LHM can be shifted and a new pass band can be generated by
introducing capacitors. When capacitors and inductors are introduced
simultaneously, the resonance of traditional LHM is somewhat
weakened and the number of original pass bands as well as its
bandwidth can be changed. |
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Keywords: | LHMs doped materials forbidden band pass band |
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