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A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED |
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| Institution: | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| Abstract: | GaN-based light-emitting diode, efficiency droop, multilayer barrier, last quantum barrier |
| Keywords: | GaN-based light-emitting diode efficiency droop multilayer barrier last quantum barrier |
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