| The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells |
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| 引用本文： | 李贵君,侯国付,韩晓艳,袁育洁,魏长春,孙建,赵颖,耿新华.The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells[J].中国物理 B,2009,18(4):1674-1678. |
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| 作者姓名： | 李贵君 侯国付 韩晓艳 袁育洁 魏长春 孙建 赵颖 耿新华 |
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| 作者单位： | Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci;Institute of Photo-Electronic Thin Film Devices and
Technology of
Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and
Technology, Tianjin 300071, China
Key Laboratory of Opto-Electronic Information Sci |
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| 基金项目： | Project
supported by the State Key Development Program for Basic Research of
China (Grant Nos 2006CB202602 and 2006CB202603), and the National
Natural Science Foundation of China (Grant No
60506003). |
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| 摘 要： | This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
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| 关 键 词： | double N layer tunnel recombination junction oxidation interface a-Si:H/μc-Si:H tandem solar cell |
The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells |
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| Li Gui-Jun,Hou Guo-Fu,Han Xiao-Yan,Yuan Yu-Jie,Wei Chang-Chun,Sun Jian,Zhao Yin and Geng Xin-Hua.The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells[J].Chinese Physics B,2009,18(4):1674-1678. |
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| Authors: | Li Gui-Jun Hou Guo-Fu Han Xiao-Yan Yuan Yu-Jie Wei Chang-Chun Sun Jian Zhao Yin and Geng Xin-Hua |
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| Institution: | 1Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China ; Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China ; Key Laboratory of Opto-Electronic Information Science and Technology, Tianjin 300071, China) |
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| Abstract: | This paper reports that a double N layer (a-Si:H/$\mu $c-Si:H) is
used to substitute the single microcrystalline silicon n layer
(n-$\mu $c-Si:H) in n/p tunnel recombination junction between
subcells in a-Si:H/$\mu $c-Si:H tandem solar cells. The electrical
transport and optical properties of these tunnel recombination
junctions are investigated by current--voltage measurement and
transmission measurement. The new n/p tunnel recombination junction
shows a better ohmic contact. In addition, the n/p interface is
exposed to the air to examine the effect of oxidation on the tunnel
recombination junction performance. The open circuit voltage and FF
of a-Si:H/$\mu $c-Si:H tandem solar cell are all improved and the
current leakage of the subcells can be effectively prevented
efficiently when the new n/p junction is implemented as tunnel
recombination junction. |
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| Keywords: | double N layer tunnel
recombination junction oxidation interface a-Si:H/\muc-Si:H
tandem solar cell |
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