| Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias |
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| 作者姓名： | 高飞 张钰如 赵书霞 李雪春 王友年 |
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| 作者单位： | School of Physics and Optoelectronic Technology, Dalian University of Technology |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 11075029, 11175034, and 11205025） and the Fundamental Research Funds for Central Universities, China （Grant No. DUT12RC（3） 14）. |
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| 摘 要： | The inflexion point of electron density and effective electron temperature curves versus radio-frequency （RF） bias voltage is observed in the H mode of inductively coupled plasmas （ICPs）. The electron energy probability function （EEPF） evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is： bias- induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.
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| 关 键 词： | 电子密度 电感耦合等离子体 动态行为 射频 偏置 感应耦合等离子体 麦克斯韦分布 温度曲线 |
Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias |
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| Gao Fei,Zhang Yu-Ru,Zhao Shu-Xia,Li Xue-Chun,and Wang You-Nian.Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias[J].Chinese Physics B,2014(11):414-417. |
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| Authors: | Gao Fei Zhang Yu-Ru Zhao Shu-Xia Li Xue-Chun and Wang You-Nian |
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| Institution: | School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | inductively coupled plasmas, radio-frequency bias, Langmuir probe, fluid model |
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| Keywords: | inductively coupled plasmas radio-frequency bias Langmuir probe fluid model |
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