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A novel sensitivity model for short nets
Authors:Liu Shi-Gang  Wang Jun-Ping  Su Yong-Bang  Wang Le
Institution:a School of Communication Engineering, Xidian University, Xi'an 710071, China;b Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract:For modern processes at deep sub-micron technology node, yield design, especially the yield design at the stage of layout design is an important way to deal with the problem about manufacturability and yield. In order to reduce the yield loss caused by redundancy material defect, choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for short net, which is net-based and reflects the size of the critical area between a single net and the nets around it. Since this model is based on a single net and includes the information of surrounding nets,the critical area between the single net and surrounding nets can be reduced at the same time. In this way, the efficiency of layout optimization becomes higher. According to experimental observations, this sensitivity model can be used to choose the position for optimization. Compared with the chip-area-based and basic-layout-based sensitivity models, our sensitivity model not only has higher efficiency, but also hold true for choosing the net to be optimized at first.
Keywords:redundancy material defect  layout optimization  critical area  short sensitivity
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