Permittivity and its temperature dependence in hexagonal structure BN dominated by the local electric field |
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| Authors: | Zhang Ting Wu Meng-Qiang Zhang Shu-Ren Xiong Jie Wang Jin-Ming Zhang Da-Hai He Feng-Mei Li Zhong-Ping |
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| Institution: | a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;b Aerospace Research Institutes of Materials and Processing Technology, Beijing 100076, China |
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| Abstract: | This paper presents an analysis of the local electric field in the hexagonal boron nitride (h-BN) by introducing a modified parameter. Based on the determination of the modified parameter of h-BN, the revised Lorenz equation is developed. Then, the permittivity at high temperature and in the microwave frequency is investigated. In addition, this equation is derived for evaluating the temperature coefficient of the permittivity of h-BN. The analyses show that the permittivity increases with the increasing temperature, which is mainly attributed to the positive temperature coefficient of the ionic polarizability. |
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| Keywords: | hexagonal boron nitride permittivity temperature dependence microwave frequency |
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