Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET |
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| Authors: | Lei Xiao-Yi a Liu Hong-Xia a Zhang Kai a Zhang Yue a Zheng Xue-Feng a Ma Xiao-Hua a b and Hao Yue |
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| Institution: | a) a) Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, China b) School of Technical Physics, Xidian University, Xi’an 710071, China |
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| Abstract: | The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W ), channel length (L), and stress voltage (Vd ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly. |
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| Keywords: | pMOSFETs hot carrier effect (HCE) degradation lifetime modeling |
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