Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts |
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Authors: | Liu Fang Wang Tao Shen Bo Huang Sen Lin Fang Ma Nan Xu Fu-Jun Wang Peng and Yao Jian-Quan |
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Institution: | College of Precision Instrument and Opto-Electronics Engineering, Institute of Laser and Optoelectronics, Tianjin University;Key Lab of Optoelectric Information Science and Technology of Ministry of Education, Tianjin University;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University |
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Abstract: | Recently GaN-based high electron mobility transistors (HEMTs) have
revealed the superior properties of a high breakdown field and high
electron saturation velocity. Reduction of the gate leakage current
is one of the key issues to be solved for their further improvement.
This paper reports that an Al layer as thin as 3 nm was inserted
between the conventional Ni/Au Schottky contact and n-GaN epilayers,
and the Schottky behaviour of Al/Ni/Au contact was investigated
under various annealing conditions by current--voltage (I--V)
measurements. A non-linear fitting method was used to extract the
contact parameters from the I--V characteristic curves.
Experimental results indicate that reduction of the gate leakage
current by as much as four orders of magnitude was successfully
recorded by thermal annealing. And high quality Schottky contact
with a barrier height of 0.875 eV and the lowest reverse-bias
leakage current, respectively, can be obtained under 12 min
annealing at 450°C in N2 ambience. |
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Keywords: | Schottky contact barrier
height ideality factor thermal annealing |
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