A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric |
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| Authors: | Feng Qian Xing Tao Wang Qiang Feng Qing Li Qian Bi Zhi-Wei Zhang Jin-Cheng and Hao Yue |
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| Institution: | School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Xidian University, Xián 710071, China; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China |
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| Abstract: | Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 gate dielectrics are fabricated. The device, with atomic-layer-deposited Al2O3 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al2O3 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al2O3 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al2O3 growth and device fabrication. |
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| Keywords: | gallium nitride metal-oxide-semiconductor field-effect transistor atomic-layer deposition aluminium oxide |
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