Electric and thermal transport properties of topological insulator candidate LiMgBi |
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Institution: | 1.Institute of Physics, and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;3.Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract: | We report the transport properties of a topological insulator candidate, LiMgBi. The electric resistivity of the title compound exhibits a metal-to-semiconductor-like transition at around 160 K and tends to saturation below 50 K. At low temperatures, the magnetoresistance is up to ~260% at 9 T and a clear weak antilocalization effect is observed in the low magnetic-field region. The Hall measurement reveals that LiMgBi is a multiband system, where hole-type carriers (nh~1018 cm-3) play a major role in the transport process. Remarkably, LiMgBi possess a large Seebeck coefficient (~440 μV/K) and a moderate thermal conductivity at room temperature, which indicate that LiMgBi is a promising candidate in thermoelectric applications. |
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Keywords: | thermoelectric topological insulator crystal growth |
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