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Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
作者姓名:何小波  胡华天  唐继博  张国桢  陈雪  石俊俊  欧振伟  史志锋  张顺平  刘昌  徐红星
作者单位:School of Physics and Technology;Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices;The Institute for Advanced Studies;Key Laboratory of Materials Physics of Ministry of Education
基金项目:Project supported by the National Natural Science Foundation of China (Grant Nos. 12004222 and 91850207);the National Key Research and Development Program of China (Grant Nos. 2017YFA0303504 and 2017YFA0205800);the Fundamental Research Funds for the Central Universities, China;the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000);the Postdoctoral Science Foundation of China (Grant No. 2020M682223)
摘    要:Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.

关 键 词:ELECTROLUMINESCENCE  PLASMONICS  inelastic  electron  tunneling  multilayer  insulator  atomic  layer  deposition
收稿时间:2021-03-24

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
Xiao-Bo He,Hua-Tian Hu,Ji-Bo Tang,Guo-Zhen Zhang,Xue Chen,Jun-Jun Shi,Zhen-Wei Ou,Zhi-Feng Shi,Shun-Ping Zhang,Chang Liu,Hong-Xing Xu.Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers[J].Chinese Physics B,2022,31(1):17803-017803.
Authors:Xiao-Bo He  Hua-Tian Hu  Ji-Bo Tang  Guo-Zhen Zhang  Xue Chen  Jun-Jun Shi  Zhen-Wei Ou  Zhi-Feng Shi  Shun-Ping Zhang  Chang Liu  Hong-Xing Xu
Institution:(School of Physics and Technology,Center for Nanoscience and Nanotechnology,and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,Wuhan University,Wuhan 430072,China;Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices,School of Physics and Electronics,Shandong Normal University,Jinan 250014,China;The Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;Key Laboratory of Materials Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China)
Abstract:Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process. It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits. However, existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques, which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up. Here in this work, we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier. For the first time, we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions. Uniform electroluminescence is observed over the entire active region, with the emission spectrum shaped by metallic grating plasmons. The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier. The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.
Keywords:electroluminescence  plasmonics  inelastic electron tunneling  multilayer insulator  atomic layer deposition  
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