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Improvement in a-plane GaN crystalline quality using wet etching method
作者姓名:曹荣涛  许晟瑞  张进成  赵一  薛军帅  哈微  张帅  崔培水  温慧娟  陈兴
基金项目:Project supported by the National Natural Science Foundation of China(Grant No.61204006);the Fundamental Research Funds for the Central Universities,China(Grant No.K50511250002);the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)
摘    要:Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 (high) phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 (high) peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 (high) peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.

关 键 词:GaN薄膜  湿法蚀刻  结晶质量  X-射线衍射分析  薄膜生长  位错密度  汽相外延  金属有机

Improvement in a-plane GaN crystalline quality using wet etching method
Abstract:nonpolar GaN, wet etching, metal-organic chemical vapor deposition, crystalline quality
Keywords:nonpolar GaN  wet etching  metal-organic chemical vapor deposition  crystalline quality
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