| Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells |
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| 作者姓名： | 杨静 赵德刚 江德生 刘宗顺 陈平 李亮 吴亮亮 乐伶聪 李晓静 何晓光 王辉 朱建军 张书明 张宝顺 杨辉 |
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| 基金项目： | supported by the National Natural Science Fundation for Distinguished Young Scholars,China(Grant No.60925017);the National Natural Science Foundation of China(Grant Nos.61223005,10990100,and 61176126);the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation,China |
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| 摘 要： | Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well(MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency(EQE) of the solar cells increases in a low energy spectral range(λ 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths(λ 370 nm).
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells |
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| Abstract: | |
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| Keywords: | nitride materials external quantum efficiency polarization p-type GaN resistivity |
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