β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study |
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引用本文: | 袁吉仁,沈鸿烈,周浪,黄海宾,周耐根,邓新华,余启名.β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study[J].中国物理 B,2014(3):663-668. |
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作者姓名: | 袁吉仁 沈鸿烈 周浪 黄海宾 周耐根 邓新华 余启名 |
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作者单位: | [1]School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China [2]College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China [3]School of Science, Nanchang University, Nan chang 330031, China |
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基金项目: | Project supported by the National Natural Science Foundation of China(Grant Nos.61176062,61306084,and 51361022);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China;the Ph.D.Program Foundation of Ministry of Education of China(Grant No.20113601120006);the Natural Science Foundation of Jiangxi Province,China(Grant No.20122BAB202002);the Science and Technology Project of Education Department of Jiangxi Province,China(Grant No.GJJ13010) |
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摘 要: | Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a- Si, μ-Si, and/3-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si//3-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.
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关 键 词: | 薄膜太阳能电池 吸收体 数值研究 底部 a-Si 温度系数 结晶硅 光谱响应 |
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