Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser |
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Authors: | Huang Wei-Qi Xu Li Wang Hai-Xu Jin Feng Wu Ke-Yue Liu Shi-Rong Qin Cao-Jian and Qin Shui-Jie |
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Institution: | Institute of Geochemistry, Chinese Academy of Sciences,
Guiyang 550003, China; Key Laboratory of Photoelectron Technology and
Application, Guizhou University, Guiyang 550026, China |
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Abstract: | Stimulated photoluminescence (PL) emission has been observed from an
oxide structure of silicon when optically excited by a radiation of
514nm laser. Sharp twin peaks at 694 and 692nm are dominated by
stimulated emission, which can be demonstrated by its threshold
behaviour and linear transition of emission intensity as a function
of pump power. The oxide structure is formed by laser irradiation on
silicon and its annealing treatment. A model for explaining the
stimulated emission is proposed, in which the trap states of the
interface between an oxide of silicon and porous nanocrystal play an
important role. |
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Keywords: | interface states stimulated
emission oxide structure of silicon laser irradiation |
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