Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application |
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| Authors: | Chen Qin-Miao Li Zhen-Qing Ni Yi Cheng Shu-Yi and Dou Xiao-Ming |
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| Institution: | Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Consolidated Research Institute for Advanced Science and Medical Care, Waseda University, 513 Wasedatsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan |
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| Abstract: | The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application. Cu2ZnSnS4 precursor powder, the main raw material for the doctor-blade paste, is synthesized by a simple ball-milling process. The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction, ultraviolent/vis spectrophotometry, scanning electron microscopy, and current-voltage (J-V) meansurement. Our experimental results indicate that (i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°; (ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu2ZnSnS4, whereas an overlong annealing introduces defects; (iii) the band gap value of the doctor-bladed Cu2ZnSnS4 is around 1.41 eV; (iv) the short-circuit current density, the open-circuit voltage, the fill factor, and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2, 240 mV, 0.29, and 0.55%, respectively. |
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| Keywords: | Cu2ZnSnS4 non-vacuum process mechanochemical ball-milling process doctor-blade method |
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