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Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers
Institution:Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract:GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.
Keywords:GaN-based light-emitting diodes  GaN/InGaN superlattice barriers  electrostatic field
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