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Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer |
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| Authors: | Liu Chao Ren Zhi-Wei Chen Xin Zhao Bi-Jun Wang Xing-Fu Yin Yi-An and Li Shu-Ti |
| Institution: | Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| Abstract: | |
| Keywords: | light emitting diodes hole accumulation layer efficiency droop |
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