Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits |
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Authors: | Wang Min-Shuai and Huang Xiao-Jing |
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Institution: | Department of Physics, School of Science, Jimei University, Xiamen 361021, China |
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Abstract: | We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED. |
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Keywords: | V-shaped pits light-extraction efficiency forward voltage |
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