Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells |
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Authors: | Chen Xin Zhao Bi-Jun Ren Zhi-Wei Tong Jin-Hui Wang Xing-Fu Zhuo Xiang-Jing Zhang Jun Li Dan-Wei Yi Han-Xiang Li Shu-Ti |
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Institution: | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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Abstract: | InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented. |
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Keywords: | metal organic chemical vapor deposition (MOCVD) GaN based solar cells stepped-thickness quantum wells |
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