| Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers |
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| 引用本文： | 倪毅强,贺致远,钟健,姚尧,杨帆,向鹏,张佰君,刘扬.Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers[J].中国物理 B,2013(8):690-693. |
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| 作者姓名： | 倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬 |
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| 作者单位： | School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant No. 2010CB923200）, the National ＂863＂ Project of China （Grant No. 2011AA03A101）, the Foundation of the Key Technologies R ＆ D Program of Guangdong Province, China （Grant No. 2007A010500011）, the Inter- national Science and Technology Cooperation Program of China （Grant No. 2012DFG52260）, and the National Science Foundation of China-Guangdong Province Jointed Foundation （Grant No. U0834001）. |
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| 摘 要： | The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.
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| 关 键 词： | Si（111）衬底 MOCVD生长 电气性能 氮化镓 低温 AIN 夹层 化学汽相淀积 |
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