| Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal |
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| 引用本文： | Yong Zhang.Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal[J].中国物理 B,2022,31(3):37102-037102. |
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| 作者姓名： | Yong Zhang |
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| 作者单位： | 1.Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China;2.Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. U2032214, U2032163, and 11904002), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017483), and the Natural Science Foundation of Anhui Province, China (Grant No. 1908085QA15). |
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| 摘 要： |
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| 收稿时间： | 2021-09-17 |
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