Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing |
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| Institution: | 1.School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China |
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| Abstract: | High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×109 cm·Hz1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance. |
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| Keywords: | PbSe film infrared photodetector plasma processing |
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