Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors |
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| Institution: | 1.Key Laboratory of Intelligent Control and Optimization for Industrial Equipment, Ministry of Education;School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China;2.State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), Dalian University of Technology, Dalian 116024, China |
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| Abstract: | We investigate the effect of ozone (O3) oxidation of silicon carbide (SiC) on the flat-band voltage (Vfb) stability of SiC metal-oxide-semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O3 oxidation, and their Vfb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O3 oxidation can adjust the element distribution near SiC/SiO2 interface, improve SiC/SiO2 interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O3 oxidation improves the Vfb stability of SiC MOS capacitors by using the measurement results and O3 oxidation kinetics. |
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| Keywords: | SiC MOS capacitors ozone oxidation bias temperature instability Deal-Grove model |
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